As the saying goes, you can never have too much storage space on your phone.
Samsung could be gearing up to use its new storage chip in the upcoming Galaxy S9 and Note 9 that could see the largest internal storage capacity to date in Galaxy devices. The company yet has to confirm whether it will use the new storage solution for the Galaxy S9, but it is possible that the upcoming flagship smartphone from Samsung could have a 512 GB option.
"By assuring an early, stable supply of this advanced embedded storage, Samsung is taking a big step forward in contributing to timely launches of next-generation mobile devices by mobile manufacturers around the world".
They 64-layer V-NAND chips should also do well in other embedded devices, which are expected to soon proliferate as 5G networks create possibilities for sophisticated devices in a great many locations.Читайте также: International Olympic Committee ban Russian Federation from 2018 Winter Olympics over doping
"The new high-capacity eUFS enables a flagship smartphone to store approximately 130 4K Ultra HD (3840×2160) video clips of a 10-minute duration", writes the Korean firm.
To maximize the performance and energy efficiency of the new 512GB eUFS, Samsung has introduced a new set of proprietary technologies. The controller chip also helps by speeding up the process that converts logical block addresses to physical blocks.
As for random read speeds, Samsung says that the 512GB eUFS has a read speed of 42,000 input/output operations per second (IOPS) and write speed of 40,000 IOPS.
Samsung rates the new 512GB eUFS for sequential read speeds up to 860MB/s and sequential write speeds up to 255MB/s. The company says that kind of transfer speed is more than eight times faster than a typical microSD card is capable of. Compare that to the 100 IOPS that conventional MicroSD cards read and you have about a 400x improvement in performance.
Samsung on Tuesday announced that it had initiated volume production of UFS NAND flash memory chips with 512 GB capacity based on its latest 64-layer 512 Gb V-NAND.При любом использовании материалов сайта и дочерних проектов, гиперссылка на обязательна.
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